In the semiconductor manufacturing process, the etching process is a crucial step. It utilizes a large amount of halogen plasma to etch the wafer surface.However, these plasmas also erode the components inside the chamber, shortening their lifespan. Additionally, the byproducts formed on the component surfaces can also become sources of process contamination.

Traditionally, component manufacturers mitigate this issue by coating a plasma-resistant layer on the component surfaces using a technique called “Atmospheric plasma spray (APS).However, as IC continue to scale down , the tolerance for these contaminants decreases.Therefore, a higher-quality coating method is needed to address this issue.

The AD coating method is a promising technology. Compared to APS, it not only provides a denser coating to resist plasma erosion but also can be completed at room temperature without damaging the components themselves. For advanced semiconductor processes, it is an indispensable technology.